|
|
Title
|
No.
|
Date
|
|
17
|
Apparatus
and method of forming preferred
orientation-controlled
platinum films using oxygen |
US
6498097 |
2002.12.24
|
|
16
|
Apparatus
and method of forming preferred
orientation-controlled
platinum films using nitrogen |
EU
0853336
|
2001.12.20.
|
|
15
|
Method
of forming a (200)-oriented platinum
layer |
US
6312567 B1
|
2001.11.
6.
|
|
14
|
Apparatus
and method of forming preferred
orientation-controlled
platinum films using oxygen |
KP
0292288
|
2001.
3.22.
|
|
13
|
Apparatus
and method of forming preferred
orientation-controlled
platinum films using nitrogen |
JP
3094382
|
2000.
8. 4.
|
|
12
|
Apparatus
and method of forming preferred
orientation-controlled
platinum films using nitrogen |
KP
0262909 |
2000.
5. 9. |
|
11
|
Apparatus
and method of depositing a platinum
film with
anti-oxidizing function over
a substrate |
KP
0262908 |
2000.
5. 9. |
|
10
|
Apparatus
and method of depositing a platinum
film with
anti-oxidizing function over
a substrate |
US
6054331 |
2000.
4.25. |
|
9
|
Apparatus
and method of forming preferred
orientation-controlled
platinum films using nitrogen |
US
6025205
|
2000.
2.15.
|
|
8
|
Method
for depositing a platinum layer on a
silicon wafer |
US
5981390 |
1999.11. 9. |
|
7
|
Apparatus
and method of forming preferred
orientation-controlled
platinum films using nitrogen |
JP
2974006 |
1999.
9. 3. |
|
6
|
Apparatus
and method of depositing a platinum
film with
anti-oxidizing function over
a substrate |
JP
2929286 |
1999.
5.21. |
|
5
|
Method
of depositieng a platinum layer with
a preferred (200)
rientation on a substrate
and an electric device having a
plainum
layer deposited by the method thereof |
KP
02147654
|
1999.
5.20.
|
|
4
|
Method
of depositieng a platinum layer with
a preferred (200)
orientation on a substrate
and an electric device having a
plainum
layer deposited by the method thereof |
JP
2916116 |
1999.
4.16. |
|
3
|
Method
for depositing a platinum layer on a
silicon wafer |
KP
174594 |
1998.11. 5. |
|
2
|
Method
for depositing a platinum layer on a
silicon wafer |
JP
2782176 |
1998.
5.22. |
|
1
|
Method
for depositing a platinum layer on a
silicon wafer |
US
5736422
|
1998.
4. 7.
|
